5.2 Specifications: 5.2.1 Pick up the existing Tempress furnace from UA and ship to vendor’s warehouse, complete tool retrofit, hold/store if necessary until the UA Nanofab has completed renovations, return and install refurbished tool. 5.2.2 Retrofit the current system, configured as follows: Tube 1: Nitride: DCS/NH3 Tube 2: Poly: SiH4 Tube 3: LTO: SiH4 Tube 4: PSG: SiH4/PH3 to: Tube 1: Nitride: DCS/NH3 Tube 2: Nitride: DCS/NH3 Tube 3: LTO: SiH4 Tube 4: O2/Ar Atmospheric Anneal (1100C max temp) 5.2.3 Tube 1: Silicon nitride, deposited at 850C, using DCS and NH3. Deposition rate no slower than 6 nm/min with a wafer-to-wafer variation not more 200A for a 5000A target film across a 25 wafer boat. A low stress nitride film should be less than 200MPa using recipe 850C, DCS (200sccm), NH3 (50sccm), Pressure (180mT). Maximum leak rate less than 4mT. Page 24 of 30 Tube 2: same as tube 1 Tube 3: Silicon Dioxide (LTO), deposited at 425C, using silane, oxygen and nitrogen (vendor recommended recipe). Deposition rate no slower than 8nm/min with a wafer-to-wafer nonuniformity no greater than 8% across a 25 wafer boat, and within wafer non-uniformity no greater than 8% for any wafer in a 25 wafer boat. Tube 4: atmospheric anneal using Oxygen, Nitrogen or Argon gases up to a temperature of 1100C. The criteria for acceptance is demonstration of stable temperature control (within +/- 2C on paddle TCs) at 1100C and 800C over a period of 5 hrs. 5.2.4 A complete assessment of the system will be required, such that the delivered product has 100% working components to accomplish the requested deposition processes detailed in 5.2.3. It may be necessary to repair and/or replace multiple components, including but not limited to: 5.2.4.1 Heater elements 5.2.4.2 Mass flow controllers 5.2.4.3 Solenoid valves and valve assemblies 5.2.4.4 Quartz tubes 5.2.4.5 Quartz injectors 5.2.4.6 Thermocouples 5.2.4.7 Any necessary adaptors 5.2.4.8 Insulation collars 5.2.4.9 Filters 5.2.4.10 Paddles
